Smart Design of Fermi Level Pinning in HfO<sub>2</sub>-Based Ferroelectric Memories

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Advanced Functional Materials. Wiley. 2024, 34(3), 2307120. ISSN 1616-301X. eISSN 1616-3028. Available under: doi: 10.1002/adfm.202307120

Event: Veröffentlichung

(where): Konstanz

(who): KOPS Universität Konstanz

(when): 2024

Creator: Baumgarten, Lutz
Szyjka, Thomas
Mittmann, Terence
Gloskovskii, Andrei
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe
Müller, Martina

URN: urn:nbn:de:bsz:352-2-v7zj7wnxlpx28

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:34 AM CEST

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Associated

Baumgarten, Lutz
Szyjka, Thomas
Mittmann, Terence
Gloskovskii, Andrei
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe
Müller, Martina
KOPS Universität Konstanz

Time of origin

2024

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Smart Design of Fermi Level Pinning in HfO<sub>2</sub>-Based Ferroelectric Memories

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Other Objects (12)

Smart Design of Fermi Level Pinning in HfO 2 ‐Based Ferroelectric Memories

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