Hochschulschrift

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2191-7167

Extent: Online-Ressource

Language: Englisch

Notes: Dresden, Technische Universität Dresden, Diss., 2015

Classification: Physik

Keyword: Speicher
Halbleiterspeicher
MOS-Speicher
Nichtflüchtiger Speicher
Elektrischer Speicher
Speicherelement
Feldeffekttransistor
Ferroelektrischer Transistor
Hafniumdioxid
Dünne Schicht

Event: Veröffentlichung

(where): Dresden

(who): Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden

(when): 2015

Event: Veröffentlichung

(where): Dresden

(who): Technische Universität Dresden

(when): 2015

Creator: Yurchuk, Ekaterina

Contributor: Mikolajick, Thomas
Dörr, Kathrin

URN: urn:nbn:de:bsz:14-qucosa-172000

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 25.03.2025, 1:44 PM CET

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Object type

Hochschulschrift

Associated

Yurchuk, Ekaterina
Mikolajick, Thomas
Dörr, Kathrin
Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden
Technische Universität Dresden

Time of origin

2015

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Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

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Other Objects (12)

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

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Nanoscale characterisation of ferroelectric materials : scanning probe microscopy approach

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