Hochschulschrift
Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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II, 85, III S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
Halle, Wittenberg, Univ., Diss., 2003
- Classification
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Physik
- Keyword
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Galliumarsenid
Störstelle
Versetzung
Raman-Effekt
Kathodolumineszenz
Galliumnitrid
Versetzung
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 11:43 AM CET
Data provider
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Object type
- Hochschulschrift
Associated
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