Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1543-186X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors ; volume:50 ; number:7 ; day:20 ; month:4 ; year:2021 ; pages:3923-3929 ; date:7.2021
Journal of electronic materials ; 50, Heft 7 (20.4.2021), 3923-3929, 7.2021
- Classification
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Elektrotechnik, Elektronik
- Creator
- Contributor
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SpringerLink (Online service)
- DOI
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10.1007/s11664-021-08842-7
- URN
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urn:nbn:de:101:1-2021092222384903013903
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:26 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sharbati, Samaneh
- Gharibshahian, Iman
- Ebel, Thomas
- Orouji, Ali Asghar
- Franke, Wulf-Toke
- SpringerLink (Online service)
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