GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
-
GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications ; day:17 ; month:11 ; year:2022 ; extent:9
Physica status solidi / A. A, Applications and materials science ; (17.11.2022) (gesamt 9)
- Creator
-
Mebarki, Mohamed Aniss
Ferrand-Drake Del Castillo, Ragnar
Pavolotsky, Alexey
Meledin, Denis
Sundin, Erik
Thorsell, Mattias
Rorsman, Niklas
Belitsky, Victor
Desmaris, Vincent
- DOI
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10.1002/pssa.202200468
- URN
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urn:nbn:de:101:1-2022111814132650937928
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:21 AM CEST
Data provider
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Associated
- Mebarki, Mohamed Aniss
- Ferrand-Drake Del Castillo, Ragnar
- Pavolotsky, Alexey
- Meledin, Denis
- Sundin, Erik
- Thorsell, Mattias
- Rorsman, Niklas
- Belitsky, Victor
- Desmaris, Vincent
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