Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance ; volume:218 ; number:3 ; year:2021
Physica status solidi / A. A, Applications and materials science ; 218, Heft 3 (2021)
- Creator
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Calvo Ruiz, Diego
Han, Daxin
Bonomo, Giorgio
Saranovac, Tamara
Ostinelli, Olivier
Bolognesi, Colombo R.
- DOI
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10.1002/pssa.202000191
- URN
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urn:nbn:de:101:1-2021031314433947797361
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:31 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Calvo Ruiz, Diego
- Han, Daxin
- Bonomo, Giorgio
- Saranovac, Tamara
- Ostinelli, Olivier
- Bolognesi, Colombo R.
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz
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Accelerated Multi‐Stage Synthesis of Indium Phosphide Quantum Dots in Modular Flow Reactors
3D molecular structural modeling and characterization of indium phosphide via irregularity topological indices
Indium phosphide metasurface with enhanced nonlinear absorption
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Nanomechanical Systems Based on Tensile-Stressed Crystalline Indium Gallium Phosphide
Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar Transistors
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Review—Extremely Thin Amorphous Indium Oxide Transistors
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Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Accelerated Multi‐Stage Synthesis of Indium Phosphide Quantum Dots in Modular Flow Reactors