Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon

Photonic integration in a micrometer‐thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high‐performance optoelectronic functions together with high‐index‐contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side‐mode‐suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross‐connects have proven their performances and high potential.

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon ; volume:217 ; number:3 ; year:2020 ; extent:12 ; Physica status solidi / A. A, Applications and materials science ; 217, Heft 3 (2020) (gesamt 12)

Contributors, Places and Time

• Creator: Jiao, Yuqing ; van der Tol, Jos ; Pogoretskii, Vadim ; van Engelen, Jorn ; Kashi, Amir Abbas ; Reniers, Sander ; Wang, Yi ; Zhao, Xinran ; Yao, Weiming ; Liu, Tianran ; Pagliano, Francesco ; Fiore, Andrea ; Zhang, Xuebing ; Cao, Zizheng ; Kumar, Rakesh Ranjan ; Tsang, Hon Ki ; van Veldhoven, Rene ; de Vries, Tjibbe ; Geluk, Erik-Jan ; Bolk, Jeroen ; Ambrosius, Huub ; Smit, Meint ; Williams, Kevin

Further information

• DOI: 10.1002/pssa.201900606
• URN: urn:nbn:de:101:1-2022070407582409013373
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 15.08.2025, 7:31 AM CEST