- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer ; volume:17 ; number:1 ; day:15 ; month:1 ; year:2022 ; pages:1-10 ; date:12.2022
Nanoscale research letters ; 17, Heft 1 (15.1.2022), 1-10, 12.2022
- Urheber
-
He, Wei
Li, Jian
Liao, Zeliang
Lin, Feng
Wu, Junye
Wang, Bing
Wang, Maojun
Liu, Nan
Chiu, Hsien-Chin
Kuo, Hao-Chung
Lin, Xinnan
Li, Jingbo
Liu, Xinke
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-022-03653-z
- URN
-
urn:nbn:de:101:1-2022042920025353951230
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:36 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- He, Wei
- Li, Jian
- Liao, Zeliang
- Lin, Feng
- Wu, Junye
- Wang, Bing
- Wang, Maojun
- Liu, Nan
- Chiu, Hsien-Chin
- Kuo, Hao-Chung
- Lin, Xinnan
- Li, Jingbo
- Liu, Xinke
- SpringerLink (Online service)
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