Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Bibliographic citation
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In: Journal of Vacuum Science & Technology (JVST) : an AVS journal#B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena, Erscheinungsjahr: 2018, Jahrgang: 36, Heft: 2, Seiten: 02D109-1-02D109-5, E-ISSN: 2166-2746
- Event
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Veröffentlichung
- (where)
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Dresden
- (who)
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Technische Universität Dresden
- (when)
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2022
- Creator
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Hentschel, Rico
Schmult, Stefan
Wachowiak, Andre
Großer, Andreas
Gärtner, Jan
Mikolajick, Thomas
- URN
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urn:nbn:de:bsz:14-qucosa2-810886
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:41 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hentschel, Rico
- Schmult, Stefan
- Wachowiak, Andre
- Großer, Andreas
- Gärtner, Jan
- Mikolajick, Thomas
- Technische Universität Dresden
Time of origin
- 2022
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Electrochemical studies of MBE-grown CaF2/BaF2 heterolayers
Hopping conduction in MBE-grown zinc selenide in high magnetic fields
High Power GaN/AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz
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MBE
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