Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility
Abstract: Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility ; day:18 ; month:06 ; year:2024 ; extent:12
Advanced electronic materials ; (18.06.2024) (gesamt 12)
- Urheber
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Bassaler, Julien
Mehta, Jash
Abid, Idriss
Konczewicz, Leszek
Juillaguet, Sandrine
Contreras, Sylvie
Rennesson, Stéphanie
Tamariz, Sebastian
Nemoz, Maud
Semond, Fabrice
Pernot, Julien
Medjdoub, Farid
Cordier, Yvon
Ferrandis, Philippe
- DOI
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10.1002/aelm.202400069
- URN
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urn:nbn:de:101:1-2406191443327.224718776685
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:44 MESZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Bassaler, Julien
- Mehta, Jash
- Abid, Idriss
- Konczewicz, Leszek
- Juillaguet, Sandrine
- Contreras, Sylvie
- Rennesson, Stéphanie
- Tamariz, Sebastian
- Nemoz, Maud
- Semond, Fabrice
- Pernot, Julien
- Medjdoub, Farid
- Cordier, Yvon
- Ferrandis, Philippe
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