AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
- Sprache
-
Englisch
- Identifier
-
1227448147
- Beteiligte Personen und Organisationen
-
Palacios, Paula
Wei, Muh-Dey
Zweipfennig, Thorsten
Ghareeb, Ahmed Hamed
Beckmann, Carsten
Kalisch, Holger
Vescan, Andrei
Negra, Renato
- DOI
-
10.18154/RWTH-2021-01829
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:55 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Palacios, Paula
- Wei, Muh-Dey
- Zweipfennig, Thorsten
- Ghareeb, Ahmed Hamed
- Beckmann, Carsten
- Kalisch, Holger
- Vescan, Andrei
- Negra, Renato
Ähnliche Objekte (12)
High frequency bipolar transistors : physics, modeling, applications
GaN-based high electron mobility transistors with high Al-content barriers
Reliability studies of GaN High Electron Mobility Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
A high field, high frequency electron paramagnetic resonance spectrometer (360 GHz, 14 T)
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
High-frequency electrodynamics
Modeling of ballistic carbon nanotube transistors for analog high-frequency applications
Optimization and characterization of GaN-based high electron mobility transistors
High Power Femtosecond Doubly Resonant Optical Parametric Oscillator
Bitcoin at high frequency
High frequency bipolar transistors : physics, modeling, applications
GaN-based high electron mobility transistors with high Al-content barriers
Reliability studies of GaN High Electron Mobility Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
A high field, high frequency electron paramagnetic resonance spectrometer (360 GHz, 14 T)
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
High-frequency electrodynamics
Modeling of ballistic carbon nanotube transistors for analog high-frequency applications
Optimization and characterization of GaN-based high electron mobility transistors
High Power Femtosecond Doubly Resonant Optical Parametric Oscillator
Bitcoin at high frequency
High frequency bipolar transistors : physics, modeling, applications
GaN-based high electron mobility transistors with high Al-content barriers
Reliability studies of GaN High Electron Mobility Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
A high field, high frequency electron paramagnetic resonance spectrometer (360 GHz, 14 T)
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
High-frequency electrodynamics
Modeling of ballistic carbon nanotube transistors for analog high-frequency applications
Optimization and characterization of GaN-based high electron mobility transistors
High Power Femtosecond Doubly Resonant Optical Parametric Oscillator