Hochschulschrift
Characterization, integration and reliability of HfO2 and LaLuO3 high-κ-metal [high-kappa-metal] gate stacks for CMOS applications
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
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30 cm
- Umfang
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XI, 179 S.
- Sprache
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Englisch
- Anmerkungen
-
Ill., graph. Darst.
Aachen, Techn. Hochsch., Diss., 2013 (Nicht für den Austausch)
- Schlagwort
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High-k Metal-Gate-Technik, High-k-Dielektrikum, CMOS, Silicium, MOS-FET
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:22 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
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