Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency ; volume:8 ; number:1 ; day:1 ; month:4 ; year:2024 ; pages:1-9 ; date:12.2024
npj 2D materials and applications ; 8, Heft 1 (1.4.2024), 1-9, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Kim, Huijun
Park, Juhwan
Jung, Hanggyo
Ra, Changho
Jeon, Jongwook
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41699-024-00466-9
- URN
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urn:nbn:de:101:1-2406181252338.122625794661
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:54 MESZ
Datenpartner
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Beteiligte
- Kim, Huijun
- Park, Juhwan
- Jung, Hanggyo
- Ra, Changho
- Jeon, Jongwook
- SpringerLink (Online service)
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