Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency ; volume:8 ; number:1 ; day:1 ; month:4 ; year:2024 ; pages:1-9 ; date:12.2024
npj 2D materials and applications ; 8, Heft 1 (1.4.2024), 1-9, 12.2024

Classification: Elektrotechnik, Elektronik

Creator: Kim, Huijun
Park, Juhwan
Jung, Hanggyo
Ra, Changho
Jeon, Jongwook

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41699-024-00466-9

URN: urn:nbn:de:101:1-2406181252338.122625794661

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:54 AM CEST

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Kim, Huijun
Park, Juhwan
Jung, Hanggyo
Ra, Changho
Jeon, Jongwook
SpringerLink (Online service)

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Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency

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