Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
Abstract: A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, the gate and body function as input terminals, which are used to write the states of the device, based on the voltage. Finally, the output signals can be easily read through the drain current. Of the 10 Institute of Electrical and Electronics Engineers (IEEE) standard logic gates, eight can be implemented using the proposed operation method alone and by following the definitions listed herein. Thus, to enable FeFET devices to act as functional logic gates, a simple operating method is proposed, providing substantial contributions to the development of computing in memory. The experimental results provide evidence of the efficacy of this method.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors ; day:14 ; month:02 ; year:2023 ; extent:6
Advanced electronic materials ; (14.02.2023) (gesamt 6)
- Urheber
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Tan, Yung‐Fang
Chang, Kai‐Chun
Tsai, Tsung‐Ming
Chang, Ting‐Chang
Chen, Wen‐Chung
Yeh, Yu‐Hsuan
Wu, Chung‐Wei
Lin, Chao‐Cheng
Sze, Simon M.
- DOI
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10.1002/aelm.202201137
- URN
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urn:nbn:de:101:1-2023021514054972977362
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.04.4025, 11:00 MESZ
Datenpartner
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Beteiligte
- Tan, Yung‐Fang
- Chang, Kai‐Chun
- Tsai, Tsung‐Ming
- Chang, Ting‐Chang
- Chen, Wen‐Chung
- Yeh, Yu‐Hsuan
- Wu, Chung‐Wei
- Lin, Chao‐Cheng
- Sze, Simon M.
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