ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles ; volume:15 ; number:1 ; day:24 ; month:5 ; year:2020 ; pages:1-8 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (24.5.2020), 1-8, 12.2020
- Creator
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Liu, Huan
Peng, Yue
Han, Genquan
Liu, Yan
Zhong, Ni
Duan, Chungang
Hao, Yue
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-020-03353-6
- URN
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urn:nbn:de:101:1-2020072921133108638920
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Liu, Huan
- Peng, Yue
- Han, Genquan
- Liu, Yan
- Zhong, Ni
- Duan, Chungang
- Hao, Yue
- SpringerLink (Online service)