ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles ; volume:15 ; number:1 ; day:24 ; month:5 ; year:2020 ; pages:1-8 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (24.5.2020), 1-8, 12.2020

Creator
Liu, Huan
Peng, Yue
Han, Genquan
Liu, Yan
Zhong, Ni
Duan, Chungang
Hao, Yue
Contributor
SpringerLink (Online service)

DOI
10.1186/s11671-020-03353-6
URN
urn:nbn:de:101:1-2020072921133108638920
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:44 AM CEST

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Associated

  • Liu, Huan
  • Peng, Yue
  • Han, Genquan
  • Liu, Yan
  • Zhong, Ni
  • Duan, Chungang
  • Hao, Yue
  • SpringerLink (Online service)

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