Hochschulschrift
Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783832540036
3832540032
- Maße
-
21 cm
- Umfang
-
X, 170 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Dresden, Techn. Univ., Diss., 2015
- Erschienen in
-
Research at NaMLab / NaMLab gGmbH ; Bd. 4
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Nichtflüchtiger Speicher
Ferroelektrischer Transistor
Hafniumdioxid
Dünne Schicht
Silicium
Dotierung
High-k Metal-Gate-Technik
CMOS
Elektrische Eigenschaft
Degradation
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin
- (wer)
-
Logos
- (wann)
-
2015
- Urheber
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:05 MESZ
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Objekttyp
- Hochschulschrift
Beteiligte
Entstanden
- 2015
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