Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation ; volume:11 ; number:1 ; day:11 ; month:2 ; year:2021 ; pages:1-8 ; date:12.2021
Scientific reports ; 11, Heft 1 (11.2.2021), 1-8, 12.2021

Creator: Pavunny, Shojan P.
Yeats, Andrew L.
Banks, Hunter B.
Bielejec, Edward
Myers-Ward, Rachael L.
DeJarld, Matthew T.
Bracker, Allan S.
Gaskill, D. Kurt
Carter, Samuel G.

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-021-82832-x

URN: urn:nbn:de:101:1-2022110319135553941859

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:30 AM CEST

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Associated

Pavunny, Shojan P.
Yeats, Andrew L.
Banks, Hunter B.
Bielejec, Edward
Myers-Ward, Rachael L.
DeJarld, Matthew T.
Bracker, Allan S.
Gaskill, D. Kurt
Carter, Samuel G.
SpringerLink (Online service)

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Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

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Other Objects (12)

Exhaustive characterization of modified Si vacancies in 4H-SiC

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Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

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Ultra-Stable and Durable Piezoelectric Nanogenerator with All-Weather Service Capability Based on N Doped 4H-SiC Nanohole Arrays

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