- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
1 Online-Ressource.
- Language
-
Englisch
- Bibliographic citation
-
Spin-acoustic control of silicon vacancies in 4H silicon carbide ; volume:6 ; number:10 ; day:21 ; month:9 ; year:2023 ; pages:739-745 ; date:10.2023
Nature electronics ; 6, Heft 10 (21.9.2023), 739-745, 10.2023
- Creator
-
Dietz, Jonathan R.
Jiang, Boyang
Day, Aaron M.
Bhave, Sunil A.
Hu, Evelyn L.
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1038/s41928-023-01029-4
- URN
-
urn:nbn:de:101:1-2024011510502602157026
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:22 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Dietz, Jonathan R.
- Jiang, Boyang
- Day, Aaron M.
- Bhave, Sunil A.
- Hu, Evelyn L.
- SpringerLink (Online service)
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Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
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Deep defect centers in 4H and 6H silicon carbide
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation
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Silicon carbide, Vol. 1.
Microcrystalline silicon carbide for silicon heterojunction solar cells
Silicon‐On‐Silicon Carbide Platform for Integrated Photonics
Silicon vacancies in silicon carbide towards scalable quantum applications
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Deep defect centers in 4H and 6H silicon carbide
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation
Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
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Silicon carbide, Vol. 1.
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