Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
- Weitere Titel
-
Elektrische Charakterisierung von Punktdefekten in 4H Siliziumkarbid Leistungsbauelementen
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2023
- Schlagwort
-
Siliciumcarbid
MOS-FET
Leistungshalbleiter
Elektrische Eigenschaft
- Ereignis
-
Veröffentlichung
- (wo)
-
Erlangen
- (wer)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (wann)
-
2023
- Urheber
- Beteiligte Personen und Organisationen
-
Weber, Heiko B.
Erlbacher, Tobias
- DOI
-
10.25593/open-fau-82
- URN
-
urn:nbn:de:101:1-2023122110094070639328
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:43 MEZ
Datenpartner
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Beteiligte
- Rasinger, Fabian
- Weber, Heiko B.
- Erlbacher, Tobias
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Entstanden
- 2023
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