Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
- Alternative title
-
Elektrische Charakterisierung von Punktdefekten in 4H Siliziumkarbid Leistungsbauelementen
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2023
- Keyword
-
Siliciumcarbid
MOS-FET
Leistungshalbleiter
Elektrische Eigenschaft
- Event
-
Veröffentlichung
- (where)
-
Erlangen
- (who)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
-
2023
- Creator
- Contributor
-
Weber, Heiko B.
Erlbacher, Tobias
- DOI
-
10.25593/open-fau-82
- URN
-
urn:nbn:de:101:1-2023122110094070639328
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:43 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Rasinger, Fabian
- Weber, Heiko B.
- Erlbacher, Tobias
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2023
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