Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
-
Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads ; volume:14 ; number:1 ; day:24 ; month:4 ; year:2024 ; pages:1-15 ; date:12.2024
Scientific reports ; 14, Heft 1 (24.4.2024), 1-15, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Yu, Eunseon
K, Gaurav Kumar
Saxena, Utkarsh
Roy, Kaushik
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-59298-8
- URN
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urn:nbn:de:101:1-2407090951069.417813726118
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:59 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Yu, Eunseon
- K, Gaurav Kumar
- Saxena, Utkarsh
- Roy, Kaushik
- SpringerLink (Online service)
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