Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads ; volume:14 ; number:1 ; day:24 ; month:4 ; year:2024 ; pages:1-15 ; date:12.2024
Scientific reports ; 14, Heft 1 (24.4.2024), 1-15, 12.2024

Classification: Elektrotechnik, Elektronik

Creator: Yu, Eunseon
K, Gaurav Kumar
Saxena, Utkarsh
Roy, Kaushik

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-024-59298-8

URN: urn:nbn:de:101:1-2407090951069.417813726118

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:59 AM CEST

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Yu, Eunseon
K, Gaurav Kumar
Saxena, Utkarsh
Roy, Kaushik
SpringerLink (Online service)

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Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

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Other Objects (12)

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