Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition ; volume:12 ; number:1 ; day:29 ; month:3 ; year:2017 ; pages:1-7 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (29.3.2017), 1-7, 12.2017
- Klassifikation
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Physik
- Urheber
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Wang, Xing
- Beteiligte Personen und Organisationen
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Liu, Hongxia
Zhao, Lu
Fei, Chenxi
Feng, Xingyao
Chen, Shupeng
Wang, Yongte
SpringerLink (Online service)
- DOI
-
10.1186/s11671-017-2018-8
- URN
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urn:nbn:de:1111-2017041614273
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:24 MESZ
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Beteiligte
- Wang, Xing
- Liu, Hongxia
- Zhao, Lu
- Fei, Chenxi
- Feng, Xingyao
- Chen, Shupeng
- Wang, Yongte
- SpringerLink (Online service)
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Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
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Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of LaxAlyO Nanolaminate Films Deposited by Atomic Layer Deposition
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Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures
Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
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