Simulation of integrate-and-fire neuron circuits using HfO₂-based ferroelectric field effect transistors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
In: 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS). Genoa, 27.-29. Nov. 2019
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Dresden
- (who)
-
Technische Universität Dresden
- (when)
-
2022
- Creator
-
Suresh, Bharathwaj
Bertele, Martin
Breyer, Evelyn T.
Klein, Philipp
Mulaosmanovic, Halid
Mikolajick, Thomas
Slesazeck, Stefan
Chicca, Elisabetta
- URN
-
urn:nbn:de:bsz:14-qucosa2-771961
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:47 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Suresh, Bharathwaj
- Bertele, Martin
- Breyer, Evelyn T.
- Klein, Philipp
- Mulaosmanovic, Halid
- Mikolajick, Thomas
- Slesazeck, Stefan
- Chicca, Elisabetta
- Technische Universität Dresden
Time of origin
- 2022
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Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
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Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
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Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Transistor-Level Layout of Integrated Circuits
Transistor-level layout of integrated circuits
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Evolution of transistor circuits
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Transistor-Level Layout of Integrated Circuits
Transistor-level layout of integrated circuits
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices