The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE ; volume:7 ; number:1 ; day:17 ; month:8 ; year:2017 ; pages:1-6 ; date:12.2017
Scientific reports ; 7, Heft 1 (17.8.2017), 1-6, 12.2017
- Urheber
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Lee, Moonsang
Mikulik, Dmitry
Yang, Mino
Park, Sungsoo
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-017-08905-y
- URN
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urn:nbn:de:101:1-2019102014462698912564
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:27 MESZ
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Beteiligte
- Lee, Moonsang
- Mikulik, Dmitry
- Yang, Mino
- Park, Sungsoo
- SpringerLink (Online service)
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MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes
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First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
GaN nanorods grown on Si (111) substrates and exciton localization
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates
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Free-standing smectic liquid crystal elastomer films
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes
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