Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates ; volume:257 ; number:2 ; year:2020 ; extent:6
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 2 (2020) (gesamt 6)

Creator: Cao, Lina
Ye, Hansheng
Wang, Jingshan
Fay, Patrick

DOI: 10.1002/pssb.201900373

URN: urn:nbn:de:101:1-2022070508565305956616

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:31 AM CEST

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Associated

Cao, Lina
Ye, Hansheng
Wang, Jingshan
Fay, Patrick

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Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

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Other Objects (12)

Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates

Spin injection in MnGa/ GaN heterostructures

GaN nanowires on diamond

Bulk GaN Ion Cleaving

GaN active rectifier diode

Wachstum und Charakterisierung von Cu-dotiertem GaN und GaN auf MgF2

GaN nanostructures for photocatalytic applications

Intermodulation distortion in GaN HEMT

Intermodulation distortion in GaN HEMT

Electron spin dynamics in GaN

Cubic AlGaN, GaN structures for device application

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Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates

Spin injection in MnGa/ GaN heterostructures

GaN nanowires on diamond

Bulk GaN Ion Cleaving

GaN active rectifier diode

Wachstum und Charakterisierung von Cu-dotiertem GaN und GaN auf MgF2

GaN nanostructures for photocatalytic applications

Intermodulation distortion in GaN HEMT

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Cubic AlGaN, GaN structures for device application

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Spin injection in MnGa/ GaN heterostructures

GaN nanowires on diamond

Bulk GaN Ion Cleaving

GaN active rectifier diode

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GaN nanostructures for photocatalytic applications

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