The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE ; volume:7 ; number:1 ; day:17 ; month:8 ; year:2017 ; pages:1-6 ; date:12.2017
Scientific reports ; 7, Heft 1 (17.8.2017), 1-6, 12.2017

Creator: Lee, Moonsang
Mikulik, Dmitry
Yang, Mino
Park, Sungsoo

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-017-08905-y

URN: urn:nbn:de:101:1-2019102014462698912564

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:27 AM CEST

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Lee, Moonsang
Mikulik, Dmitry
Yang, Mino
Park, Sungsoo
SpringerLink (Online service)

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Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

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LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

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Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

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Free-standing smectic liquid crystal elastomer films

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

GaN nanorods grown on Si (111) substrates and exciton localization

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

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Other Objects (12)

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

GaN nanorods grown on Si (111) substrates and exciton localization

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

Free-standing smectic liquid crystal elastomer films

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

GaN nanorods grown on Si (111) substrates and exciton localization

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

Free-standing smectic liquid crystal elastomer films

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

GaN nanorods grown on Si (111) substrates and exciton localization

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates

LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

Free-standing smectic liquid crystal elastomer films

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

MBE-grown cubic GaN QDs integrated into 2D photonic crystal membranes

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

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