Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption ; volume:11 ; number:1 ; day:11 ; month:1 ; year:2021 ; pages:1-10 ; date:12.2021
Scientific reports ; 11, Heft 1 (11.1.2021), 1-10, 12.2021

Creator: Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-020-79560-z

URN: urn:nbn:de:101:1-2021020612094263621143

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:24 AM CEST

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Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.
SpringerLink (Online service)

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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

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Other Objects (12)

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