Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption ; volume:11 ; number:1 ; day:11 ; month:1 ; year:2021 ; pages:1-10 ; date:12.2021
Scientific reports ; 11, Heft 1 (11.1.2021), 1-10, 12.2021
- Urheber
-
Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s41598-020-79560-z
- URN
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urn:nbn:de:101:1-2021020612094263621143
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:24 MESZ
Datenpartner
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Beteiligte
- Antoun, G.
- Tillocher, T.
- Lefaucheux, P.
- Faguet, J.
- Maekawa, K.
- Dussart, R.
- SpringerLink (Online service)
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