Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level ; volume:217 ; number:21 ; year:2020 ; extent:9
Physica status solidi / A. A, Applications and materials science ; 217, Heft 21 (2020) (gesamt 9)
- Creator
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Tautz, Markus
Weimar, Andreas
Graßl, Christian
Welzel, Martin
Díaz Díaz, David
- DOI
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10.1002/pssa.202000221
- URN
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urn:nbn:de:101:1-2022062407582801115641
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:29 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Tautz, Markus
- Weimar, Andreas
- Graßl, Christian
- Welzel, Martin
- Díaz Díaz, David
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Characterization and Manipulation of N-face Gallium Nitride Etching in Alkaline Solution
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Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning
Technology of gallium nitride crystal growth
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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Aluminium and Gallium Silylimides as Nitride Sources **
Crystal Orientation Dependence of Gallium Nitride Wear
Electrolyte Effect on Photoetching of Gallium Nitride
Normally-off transistor topologies in gallium nitride technology
Characterization and Manipulation of N-face Gallium Nitride Etching in Alkaline Solution
Gallium nitride electronics
Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Aluminium and Gallium Silylimides as Nitride Sources **
Crystal Orientation Dependence of Gallium Nitride Wear
Electrolyte Effect on Photoetching of Gallium Nitride