Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level ; volume:217 ; number:21 ; year:2020 ; extent:9
Physica status solidi / A. A, Applications and materials science ; 217, Heft 21 (2020) (gesamt 9)
- Urheber
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Tautz, Markus
Weimar, Andreas
Graßl, Christian
Welzel, Martin
Díaz Díaz, David
- DOI
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10.1002/pssa.202000221
- URN
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urn:nbn:de:101:1-2022062407582801115641
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:29 MESZ
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Beteiligte
- Tautz, Markus
- Weimar, Andreas
- Graßl, Christian
- Welzel, Martin
- Díaz Díaz, David
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