- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
1 Online-Ressource.
- Language
-
Englisch
- Bibliographic citation
-
Electrolyte Effect on Photoetching of Gallium Nitride ; volume:7 ; number:1 ; day:6 ; month:3 ; year:2024 ; pages:1-14 ; date:12.2024
Nanomanufacturing and metrology ; 7, Heft 1 (6.3.2024), 1-14, 12.2024
- Creator
-
Liang, Huiqiang
Wei, Zhenghao
Fang, Jiongchong
Li, Yanming
Li, Changli
Xie, Zhirun
Ng, Yun Hau
Zeng, Guosong
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1007/s41871-024-00224-x
- URN
-
urn:nbn:de:101:1-2405100925331.189472970949
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:47 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Liang, Huiqiang
- Wei, Zhenghao
- Fang, Jiongchong
- Li, Yanming
- Li, Changli
- Xie, Zhirun
- Ng, Yun Hau
- Zeng, Guosong
- SpringerLink (Online service)
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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Aluminium and Gallium Silylimides as Nitride Sources **
Indium gallium nitride nanostructures for optoelectronic applications
Crystal Orientation Dependence of Gallium Nitride Wear
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Normally-off transistor topologies in gallium nitride technology
Polarity control and doping in aluminum gallium nitride
Gallium nitride electronics
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Aluminium and Gallium Silylimides as Nitride Sources **
Indium gallium nitride nanostructures for optoelectronic applications
Crystal Orientation Dependence of Gallium Nitride Wear
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Normally-off transistor topologies in gallium nitride technology
Polarity control and doping in aluminum gallium nitride
Gallium nitride electronics
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Aluminium and Gallium Silylimides as Nitride Sources **
Indium gallium nitride nanostructures for optoelectronic applications
Crystal Orientation Dependence of Gallium Nitride Wear
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Normally-off transistor topologies in gallium nitride technology