- Alternative title
-
Kontrolle der Polarität und Dotierung in Aluminium Gallium Nitrid
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Berlin, Technische Universität Berlin, Diss., 2013
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Berlin
- (who)
-
Technische Universität Berlin
- (when)
-
2013
- Creator
- Contributor
-
Kneissl, Michael
Lehmann, Michael
Sitar, Zlatko
- URN
-
urn:nbn:de:kobv:83-opus4-39690
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:54 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Hoffmann, Marc Patrick
- Kneissl, Michael
- Lehmann, Michael
- Sitar, Zlatko
- Technische Universität Berlin
Time of origin
- 2013
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Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Electrical transport properties of doped gallium nitride nanowires
Normally-off transistor topologies in gallium nitride technology
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
High-k dielectrics for gallium nitride based electronic devices
Metal‐lorganic chemical vapor deposition of aluminum scandium nitride
Germanium doping of aluminum-containing cubic group III-nitride heterostructures
Gallium nitride electronics
Defect analysis of aluminum nitride
Technology of gallium nitride crystal growth
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Electrical transport properties of doped gallium nitride nanowires
Normally-off transistor topologies in gallium nitride technology
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
High-k dielectrics for gallium nitride based electronic devices
Metal‐lorganic chemical vapor deposition of aluminum scandium nitride
Germanium doping of aluminum-containing cubic group III-nitride heterostructures
Gallium nitride electronics
Defect analysis of aluminum nitride
Technology of gallium nitride crystal growth
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Electrical transport properties of doped gallium nitride nanowires
Normally-off transistor topologies in gallium nitride technology
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
High-k dielectrics for gallium nitride based electronic devices