- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Berlin, Techn. Univ., Diss., 2010
- Klassifikation
-
Physik
- Urheber
-
Schulz, Tobias
- URN
-
urn:nbn:de:kobv:83-opus-27010
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:31 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Schulz, Tobias
Ähnliche Objekte (12)
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers
Polarity control and doping in aluminum gallium nitride
Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Advanced defect control in wide-bandgap III-nitride semiconductors
Oxidation mechanism of aluminum nitride revisited
Aluminum Nitride in Al–Si–Mg Alloy
Gel-tape-casting of aluminum nitride ceramics
Modeling the Precipitation of Aluminum Nitride Inclusions during Solidification of High‐Aluminum Steels
Defect engineering in transition metal based nitride thin films by energetic treatment during deposition
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Thermal properties of hot-pressed aluminum nitride–graphene composites
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers
Polarity control and doping in aluminum gallium nitride
Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Advanced defect control in wide-bandgap III-nitride semiconductors
Oxidation mechanism of aluminum nitride revisited
Aluminum Nitride in Al–Si–Mg Alloy
Gel-tape-casting of aluminum nitride ceramics
Modeling the Precipitation of Aluminum Nitride Inclusions during Solidification of High‐Aluminum Steels
Defect engineering in transition metal based nitride thin films by energetic treatment during deposition
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Thermal properties of hot-pressed aluminum nitride–graphene composites
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers
Polarity control and doping in aluminum gallium nitride
Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Advanced defect control in wide-bandgap III-nitride semiconductors
Oxidation mechanism of aluminum nitride revisited
Aluminum Nitride in Al–Si–Mg Alloy
Gel-tape-casting of aluminum nitride ceramics
Modeling the Precipitation of Aluminum Nitride Inclusions during Solidification of High‐Aluminum Steels
Defect engineering in transition metal based nitride thin films by energetic treatment during deposition
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride