Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: physica status solidi (a) 221.21 (2024). DOI:10.1002/pssa.202400045
In: physica status solidi (a) 221 : 21
- Ereignis
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Veröffentlichung
- (wo)
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Erlangen
- (wer)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (wann)
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2024
- Urheber
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Faber, Samuel
Römer, Friedhard
Witzigmann, Bernd
- DOI
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10.1002/pssa.202400045
- URN
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urn:nbn:de:101:1-2502070500141.253734308793
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:29 MESZ
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Beteiligte
- Faber, Samuel
- Römer, Friedhard
- Witzigmann, Bernd
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Entstanden
- 2024
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Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
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