- Weitere Titel
-
Selbstsperrende Transistor-Topologien in der Galliumnitrid-Technologie
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2020
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Technology
Gallium nitride
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2020
- Urheber
- Beteiligte Personen und Organisationen
- DOI
-
10.18154/RWTH-2020-06120
- URN
-
urn:nbn:de:101:1-2020080423301839419874
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:43 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Lükens, Gerrit
- Vescan, Andrei
- Lemme, Max Christian
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2020
Ähnliche Objekte (12)
Efficient Optoelectronics with 2D Materials
Engineering graphene field effect transistors for analog applications
Editorial
Gallium nitride electronics
Potential of transition metal dichalcogenide transistors for flexible electronics applications
Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Improved voltage gain in mechanically stacked bilayer graphene field effect transistors
Process engineering for wafer-level integration of graphene into industrial applications
Efficient Optoelectronics with 2D Materials
Engineering graphene field effect transistors for analog applications
Editorial
Gallium nitride electronics
Potential of transition metal dichalcogenide transistors for flexible electronics applications
Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Improved voltage gain in mechanically stacked bilayer graphene field effect transistors
Process engineering for wafer-level integration of graphene into industrial applications
Efficient Optoelectronics with 2D Materials
Engineering graphene field effect transistors for analog applications
Editorial
Gallium nitride electronics
Potential of transition metal dichalcogenide transistors for flexible electronics applications
Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Improved voltage gain in mechanically stacked bilayer graphene field effect transistors