Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation ; volume:12 ; number:1 ; day:15 ; month:8 ; year:2022 ; pages:1-8 ; date:12.2022
Scientific reports ; 12, Heft 1 (15.8.2022), 1-8, 12.2022
- Urheber
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Harada, Shunta
Mii, Toshiki
Sakane, Hitoshi
Kato, Masashi
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-022-17060-y
- URN
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urn:nbn:de:101:1-2022102423062500443305
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:23 MESZ
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Beteiligte
- Harada, Shunta
- Mii, Toshiki
- Sakane, Hitoshi
- Kato, Masashi
- SpringerLink (Online service)
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Local-environment dependence of stacking fault energies in concentrated solid-solution alloys
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Effect of Sn on stacking fault energies in zirconium and its hydrides
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Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
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Local-environment dependence of stacking fault energies in concentrated solid-solution alloys
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Effect of Sn on stacking fault energies in zirconium and its hydrides
Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels