Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation ; volume:12 ; number:1 ; day:15 ; month:8 ; year:2022 ; pages:1-8 ; date:12.2022
Scientific reports ; 12, Heft 1 (15.8.2022), 1-8, 12.2022

Creator: Harada, Shunta
Mii, Toshiki
Sakane, Hitoshi
Kato, Masashi

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-022-17060-y

URN: urn:nbn:de:101:1-2022102423062500443305

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Harada, Shunta
Mii, Toshiki
Sakane, Hitoshi
Kato, Masashi
SpringerLink (Online service)

Other Objects (12)

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Advancing Catalysts by Stacking Fault Defects for Enhanced Hydrogen Production: A Review

Local-environment dependence of stacking fault energies in concentrated solid-solution alloys

The role of stacking fault tetrahedra on void swelling in irradiated copper

Thermodynamic modeling of stacking fault energy in Fe–Mn–C austenitic steels

Effect of Sn on stacking fault energies in zirconium and its hydrides

Temperature dependence of the stacking-fault Gibbs energy for Al, Cu, and Ni

Related objects

Reset password