Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films ; volume:15 ; number:1 ; day:21 ; month:3 ; year:2024 ; pages:1-11 ; date:12.2024
Nature Communications ; 15, Heft 1 (21.3.2024), 1-11, 12.2024

Creator: Wang, Hongguang
Zhang, Jiawei
Shen, Chen
Yang, Chao
Küster, Kathrin
Deuschle, Julia
Starke, Ulrich
Zhang, Hongbin
Isobe, Masahiko
Huang, Dennis
Aken, Peter Antonie van
Takagi, Hidenori

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41467-024-46934-0

URN: urn:nbn:de:101:1-2405230727160.423560425179

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:50 AM CEST

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Associated

Wang, Hongguang
Zhang, Jiawei
Shen, Chen
Yang, Chao
Küster, Kathrin
Deuschle, Julia
Starke, Ulrich
Zhang, Hongbin
Isobe, Masahiko
Huang, Dennis
Aken, Peter Antonie van
Takagi, Hidenori
SpringerLink (Online service)

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Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+x Se2 films

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Other Objects (12)

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Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Epitaxial graphene functionalization : : covalent grafting of molecules, terbium intercalation and defect engineering

Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

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Epitaxial graphene on silicon carbide surfaces : growth, characterization, doping and hydrogen intercalation = (Epitaktisches Graphen auf Siliziumkarbid-Oberflächen)

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Gateless patterning of epitaxial graphene by local intercalation

Highly p-doped epitaxial graphene obtained by fluorine intercalation

Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties

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Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

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Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Epitaxial graphene on silicon carbide surfaces : growth, characterization, doping and hydrogen intercalation = (Epitaktisches Graphen auf Siliziumkarbid-Oberflächen)

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Visualization of the electronic phase separation in superconducting K x Fe2−y Se2

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Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties

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Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Epitaxial graphene functionalization : : covalent grafting of molecules, terbium intercalation and defect engineering

Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

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Epitaxial graphene on silicon carbide surfaces : growth, characterization, doping and hydrogen intercalation = (Epitaktisches Graphen auf Siliziumkarbid-Oberflächen)

Visualization of the electronic phase separation in superconducting K x Fe2−y Se2

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