Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Abstract: Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p‐type polarization doping induced by the bulk of the hexagonal silicon carbide (SiC)(0001) substrate and overcompensation by donor‐like states related to the buffer layer. The presented work is evidence that this effect is also related to the specific underlying SiC terrace. Here a periodic sequence of non‐identical SiC terraces is fabricated, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface‐sensitive methods. This correlation is attributed to a proximity effect of the SiC termination‐dependent polarization doping on the overlying graphene layer. These findings open a new approach for a nano‐scale doping‐engineering by the self‐patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene ; volume:30 ; number:45 ; year:2020 ; extent:12 ; Advanced functional materials ; 30, Heft 45 (2020) (gesamt 12)

Contributors, Places and Time

• Creator: Momeni Pakdehi, Davood ; Schädlich, Philip ; Nguyen, Thi Thuy Nhung ; Zakharov, Alexei A. ; Wundrack, Stefan ; Najafidehaghani, Emad ; Speck, Florian ; Pierz, Klaus ; Seyller, Thomas ; Tegenkamp, Christoph ; Schumacher, Hans Werner

Further information

• DOI: 10.1002/adfm.202004695
• URN: urn:nbn:de:101:1-2022060913530774599760
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 15.08.2025, 7:21 AM CEST