A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Applied Physics Letters 100.12 (2012): 07.11.2012
- Klassifikation
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Physik
- Schlagwort
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-
- Ereignis
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Veröffentlichung
- (wo)
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Erlangen
- (wer)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (wann)
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2012
- Beteiligte Personen und Organisationen
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Krach, Florian
Hertel, Stefan
Waldmann, D.
Jobst, Johannes
Krieger, Michael
Reshanov, S.
Schöner, A.
Weber, Heiko B.
- URN
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urn:nbn:de:bvb:29-opus-38192
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:56 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Krach, Florian
- Hertel, Stefan
- Waldmann, D.
- Jobst, Johannes
- Krieger, Michael
- Reshanov, S.
- Schöner, A.
- Weber, Heiko B.
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Entstanden
- 2012
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