Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1543-186X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices ; volume:39 ; number:6 ; day:26 ; month:3 ; year:2010 ; pages:684-687 ; date:6.2010
Journal of electronic materials ; 39, Heft 6 (26.3.2010), 684-687, 6.2010

Creator
Chen, Bin
Chen, Jun
Sekiguchi, Takashi
Ohyanagi, Takasumi
Matsuhata, Hirofumi
Kinoshita, Akimasa
Okumura, Hajime
Contributor
SpringerLink (Online service)

DOI
10.1007/s11664-010-1168-6
URN
urn:nbn:de:101:1-2022021317542495566995
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:20 AM CEST

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Associated

  • Chen, Bin
  • Chen, Jun
  • Sekiguchi, Takashi
  • Ohyanagi, Takasumi
  • Matsuhata, Hirofumi
  • Kinoshita, Akimasa
  • Okumura, Hajime
  • SpringerLink (Online service)

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