Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors ; day:22 ; month:10 ; year:2024 ; extent:17
Advanced electronic materials ; (22.10.2024) (gesamt 17)
- Creator
-
Morozovska, Anna N.
Eliseev, Eugene A.
Vysochanskii, Yulian M.
Kalinin, Sergei V.
Strikha, Maksym V.
- DOI
-
10.1002/aelm.202400495
- URN
-
urn:nbn:de:101:1-2410231412069.461668560244
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:37 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Morozovska, Anna N.
- Eliseev, Eugene A.
- Vysochanskii, Yulian M.
- Kalinin, Sergei V.
- Strikha, Maksym V.
Other Objects (12)
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors
High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
Three-terminal capacitance-voltage measurements of pentacene field-effect transistors during operation
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors
Organic field-effect optical waveguides
Metal nanoparticle field-effect transistor
Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance
Effect of contact resistance in organic field‐effect transistors
N-heteroacenes in organic field-effect transistors
Interface engineering in organic field-effect transistors
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors
High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
Three-terminal capacitance-voltage measurements of pentacene field-effect transistors during operation
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors
Organic field-effect optical waveguides
Metal nanoparticle field-effect transistor
Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance
Effect of contact resistance in organic field‐effect transistors
N-heteroacenes in organic field-effect transistors
Interface engineering in organic field-effect transistors
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors
High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
Three-terminal capacitance-voltage measurements of pentacene field-effect transistors during operation
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors
Organic field-effect optical waveguides
Metal nanoparticle field-effect transistor
Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance
Effect of contact resistance in organic field‐effect transistors
N-heteroacenes in organic field-effect transistors