High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching ; day:18 ; month:11 ; year:2024 ; extent:8
Advanced electronic materials ; (18.11.2024) (gesamt 8)
- Urheber
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Huang, Yuan
Sutter, Eli
Parkinson, Bruce A.
Sutter, Peter
- DOI
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10.1002/aelm.202400691
- URN
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urn:nbn:de:101:1-2411191318289.076860339214
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:23 MESZ
Datenpartner
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Beteiligte
- Huang, Yuan
- Sutter, Eli
- Parkinson, Bruce A.
- Sutter, Peter
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