High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching ; day:18 ; month:11 ; year:2024 ; extent:8
Advanced electronic materials ; (18.11.2024) (gesamt 8)

Creator: Huang, Yuan
Sutter, Eli
Parkinson, Bruce A.
Sutter, Peter

DOI: 10.1002/aelm.202400691

URN: urn:nbn:de:101:1-2411191318289.076860339214

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

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Huang, Yuan
Sutter, Eli
Parkinson, Bruce A.
Sutter, Peter

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High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

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Other Objects (12)

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