Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors ; day:08 ; month:05 ; year:2024 ; extent:8
Advanced electronic materials ; (08.05.2024) (gesamt 8)

Creator: Ali, Fida
Choi, Hyungyu
Ali, Nasir
Hassan, Yasir
Ngo, Tien Dat
Ahmed, Faisal
Park, Won‐Kyu
Sun, Zhipei
Yoo, Won Jong

DOI: 10.1002/aelm.202400071

URN: urn:nbn:de:101:1-2405081443018.246953207594

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:58 AM CEST

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Associated

Ali, Fida
Choi, Hyungyu
Ali, Nasir
Hassan, Yasir
Ngo, Tien Dat
Ahmed, Faisal
Park, Won‐Kyu
Sun, Zhipei
Yoo, Won Jong

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Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors

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Other Objects (12)

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Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors

High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

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