Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances ; volume:14 ; number:1 ; day:24 ; month:5 ; year:2019 ; pages:1-6 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (24.5.2019), 1-6, 12.2019
- Klassifikation
-
Elektrotechnik, Elektronik
- Urheber
-
Li, Jing
Liu, Yan
Han, Genquan
Zhou, Jiuren
Hao, Yue
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-019-3013-z
- URN
-
urn:nbn:de:101:1-2019091905323532962891
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:31 MESZ
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Beteiligte
- Li, Jing
- Liu, Yan
- Han, Genquan
- Zhou, Jiuren
- Hao, Yue
- SpringerLink (Online service)
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