Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1556-276X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2 ; volume:14 ; number:1 ; day:4 ; month:4 ; year:2019 ; pages:1-8 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (4.4.2019), 1-8, 12.2019

Classification: Ingenieurwissenschaften und Maschinenbau

Creator: Peng, Yue
Liu, Yan
Han, Genquan
Zhang, Jincheng
Hao, Yue

Contributor: SpringerLink (Online service)

DOI: 10.1186/s11671-019-2927-9

URN: urn:nbn:de:101:1-2019042423153771197923

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:47 AM CEST

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Peng, Yue
Liu, Yan
Han, Genquan
Zhang, Jincheng
Hao, Yue
SpringerLink (Online service)

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Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

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