Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2 ; volume:8 ; number:1 ; day:29 ; month:3 ; year:2018 ; pages:1-6 ; date:12.2018
Scientific reports ; 8, Heft 1 (29.3.2018), 1-6, 12.2018

Classification: Physik

Creator: Park, Youngsin

Contributor: Chan, Christopher C. S.
Taylor, Robert A.
Kim, Yongchul
Kim, Nammee
Jo, Yongcheol
Lee, Seung W.
Yang, Woochul
Im, Hyunsik
Lee, Geunsik
SpringerLink (Online service)

DOI: 10.1038/s41598-018-23788-3

URN: urn:nbn:de:1111-201805279365

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:35 AM CEST

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Associated

Park, Youngsin
Chan, Christopher C. S.
Taylor, Robert A.
Kim, Yongchul
Kim, Nammee
Jo, Yongcheol
Lee, Seung W.
Yang, Woochul
Im, Hyunsik
Lee, Geunsik
SpringerLink (Online service)

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Highly nonlinear dipolar exciton-polaritons in bilayer MoS2

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Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

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Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

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Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

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Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

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Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

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Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

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Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate

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Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

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Other Objects (12)

Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles

Highly nonlinear dipolar exciton-polaritons in bilayer MoS2

Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

Fabrication of Stacked MoS2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate

Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles

Highly nonlinear dipolar exciton-polaritons in bilayer MoS2

Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

Fabrication of Stacked MoS2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate

Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles

Highly nonlinear dipolar exciton-polaritons in bilayer MoS2

Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

Fabrication of Stacked MoS2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate

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